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ACMOSLowNoise Amplifier at 1.8GHzwith Active Inductor Load
; n H2 f8 G# o9 a% x/ e/ WWANGLiang-jiang,FENGQuan-yuan$ j* A! K. Y2 [; I0 v/ i
(I nstitute of Micro-electronics, Southwest J iaotong University, Chendu 6 1 00 3 1 , China )
4 ^1 P' [. V, TAbstract:A 1.8G H z C M O S low noise am plifier (L N A ) w ith transform er-type active inductor load is presented.
; Q; _. s' }2 p( `' R" E& T; XF or large inductance value, the quality-factor (Q) of an on-chip passive inductor is com m on ly low .3 c& P5 M8 i( X p# F
H ence, the purpose of this w ork is to verify th e validity of using transform er-type active inductor load as1 y& I0 u# \7 r7 O: S# s a
substitutes for passive one. T he perform ance of the L N A is sim ulated and com pared w ith certain existing0 Z% _; W5 Y6 j+ D3 A
L N A w ith passive on -chip inductor load w hich show s the L N A w ith transform er-type active inductor load
3 {: V4 P) a. w- vcan achieve low er noise figure.
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[ 本帖最後由 sjhor 於 2007-5-17 10:33 PM 編輯 ] |
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