|
2#
樓主 |
發表於 2010-6-25 08:50:33
|
只看該作者
Abstract -- The diode operated in forward-biased condition has/ \4 D4 X" r3 w( l3 I. D2 y
been widely used as an effective on-chip ESD protection device at, i" x# q+ u' d. g, t
GHz RF and high-speed I/O pads due to the small parasitic
: F8 [7 d! z4 d) Z/ d. hloading effect and high ESD robustness in CMOS integrated
! X" |8 t2 z% e l8 v4 J. p: pcircuits (ICs). This work presents new ESD protection diodes0 S; t4 _6 B/ o( Z
realized in the octagon, waffle-hollow, and octagon-hollow layout
8 f% h; z) d$ D% y: B- \( ~3 s+ gstyles to improve the efficiency of ESD current distribution and& b- ^* X& q# j. f
to reduce the parasitic capacitance. The new ESD protection; q: |- f F& d. w7 H
diodes can achieve smaller parasitic capacitance under the same% c7 t- R; G% `# i* J$ {+ Q. b
ESD robustness level as compared to the waffle diode. Therefore,; E7 t& Z( Z6 A$ x& c( S* x9 v. \
the signal degradation of GHz RF and high-speed transmission4 y8 b. \2 a& _, @4 ~, Q2 B4 ~
can be reduced due to smaller parasitic capacitance from the new! L, \. V1 |8 p9 F |
proposed diodes. |
|