hspice 問題 有關mos內部電容指令

0918429587

mos內部電容要看Cgs Cgd Cdb Cbs
9 c; ]9 x3 X# e7 i! `9 h% Y  ]# x
要怎麼定義用
  ~( j9 f! Q# [& Lplot LX??

3 W8 y! V; I8 d( b$ q請各位幫忙一下

小朱仔

直接下.op及.probe
. @! q+ {5 w, p% O& f6 w* f& L" J4 D1 q找*.lis檔(模擬產生出來的檔)裡的MOS就可以看到您要的C值了

yalon

您得隨手  查一下 manual .
! ?; W/ b6 h4 P6 m! n/ h+ Q. K
Cgd Cgs Cgb 可由 lx(19) lx(20) lx(21) 分別 print out.
3 |& X& C2 F/ x
1 N) n, }/ B" E
+ e) A% h, O1 \# I2 mFor your reference.

0918429587

CAB_BS    LX28
( m- y/ `/ G3 q! U9 y  G) \* nCAB_BD   LX29

其他我找不到
' |0 O) w( P' ~% V- [* B2 m0 TCgd Cgs Cgb 可由 lx(19) lx(20) lx(21) 分別 print out
這是 CGDBO  CGSBO CBGBO
8 H. d. M8 T7 _3 Z+ l  A- t
不一樣

chcheng

Refer to "HSPICE User's Manual: Elements and Device Models Vol.II"
+ R: q+ c9 O7 Q7 E# L9 b" SAn example for your reference...
% [" G  l5 V$ b7 o/ F/ y6 n
% ^- o3 `6 h. B3 Q# K, a. b----------------------------------------------------------------
***** Gate Capacitance Plots *****
.lib 'your_component_model' lib_corner
.temp operational_temp
9 F) m' k  s; J6 A& i. f1 m.option dccap=1 post
m1 n_drain n_gate gnd n_bulk l=0.8u w=100u ad=200e-12 as=200e-12
vd n_drain gnd 0
' r- \& I/ H' R* T. E$ Cvg n_gate gnd 5
vb n_bulk gnd 0
0 v' Q9 J' \* p" c0 Z.dc vd 0 5.0 0.1
# m  i9 z+ j& g- v" V+ O# p  f& t.print   CGG=lx18(m1)
3 R1 ]3 C; ~- \2 ]2 u, ?+        CGD=par('-lx19(m1)')
9 u6 L6 i! ]4 H( W. t+        CGS=par('-lx20(m1)')
- J( i& w; x: e. a. L+        CDG=par('-lx32(m1)')
+        CSG=par('lx18(m1) + lx21(m1) + lx32(m1)')
& {9 S$ Q( r& N+ z6 ?' E# ?+        CGB=par('lx18(m1) + lx19(m1) + lx20(m1)')
! q' V$ t  g! N  b.ends

, _0 \' U8 l9 f0 |8 d----------------------------------------------------------------
% s; _5 P7 f( a' MSix capacitance are reported in the operating point printout
  |) k* G$ N' j3 n) D2 p    cd_total = dQD/dVD
: q3 d- `+ V, k. v$ \! v3 Y    cg_total = dQG/dVG
    cs_total = dQS/dVS
    cb_total = dQB/dVB
3 o2 Q1 J6 V* _& e5 y% s! J    cgs = -dQG/dVS
    cgd = -dQG/dVD
There capcitances include gate-drain, gate-source, and gate-bulk
; W: d( j1 W, A* doverlap capacitance, and drain-bulk and source-bulk diode capacitance.
5 O. T4 \$ q. A
CGG = dQg/dVG
CGD = -dQg/dVD
) p+ o. ?) S7 ?. V3 G+ G! R- ACDG = -dQD/dVG

The MOS element template printouts for gate capacitance are LX18~LX23
8 o6 f4 A* k" B* F6 Wand LX32~LX34.

LX18(m) = dQG/dVGB = CGGBO
LX19(m) = dQG/dVDB = CGDBO
/ I1 S$ K4 Q. u! |- B- [/ sLX20(m) = dQG/dVSB = CGSBO
2 k$ {$ q" F2 @  @& r6 Y' G
5 a% D# O) y& |8 DLX21(m) = dQB/dVGB = CGGBO
# `1 `  q- q! u$ L$ gLX22(m) = dQB/dVDB = CGGBO
" I4 h( F* Q% dLX23(m) = dQB/dVSB = CGGBO

LX32(m) = dQD/dVG = CDGBO
/ C+ t2 o! M, ^& U0 h5 n) h8 i4 LLX33(m) = dQD/dVD = CDDBO
LX34(m) = dQD/dVS = CDSBO

% G1 U- |3 o6 W2 {0 ^5 NThe equation shown above is for an NMOS with source-bulk grounded
configuration. Refer to the user's manual for more detail ^^