Chip123 科技應用創新平台

 找回密碼
 申請會員

QQ登錄

只需一步,快速開始

Login

用FB帳號登入

搜索
1 2 3 4
查看: 2678|回復: 1
打印 上一主題 下一主題

[問題求助] the gate line of CMOS power cell problem

[複製鏈接]
跳轉到指定樓層
1#
發表於 2008-5-12 16:25:39 | 只看該作者 回帖獎勵 |倒序瀏覽 |閱讀模式
Hi, Now I'm designneing the RF CMOS power cell, I want to design the proper gateline netwirk with EM simulator, but found that it is so sensitive to the conductive substrate? (I mean when the sub is setted with cnductive, the gain will degerate a lot but when it is setted with nonconductive, that gain looks like good), bdesides, I found that when i put metal (ex.M1) under the gateline, for some foundrym it will be good, but for some foundry, it doesn't, looks like so wired! whi can tell u something about it? who has some experience? Pls give me some helps! thank u!
分享到:  QQ好友和群QQ好友和群 QQ空間QQ空間 騰訊微博騰訊微博 騰訊朋友騰訊朋友
收藏收藏 分享分享 頂 踩 分享分享
2#
發表於 2008-5-13 13:47:49 | 只看該作者
不知道我理解的是否正确,因为的确在某些代工厂商所提供的规则文件中,对连接文件的定义有偏差,并没有按照严格的Connect关系来定义连接。所以这是一个严重的问题,只能通过重新定义设计规则文件中的相关项来解决。
您需要登錄後才可以回帖 登錄 | 申請會員

本版積分規則

首頁|手機版|Chip123 科技應用創新平台 |新契機國際商機整合股份有限公司

GMT+8, 2024-5-21 03:04 PM , Processed in 0.099012 second(s), 17 queries .

Powered by Discuz! X3.2

© 2001-2013 Comsenz Inc.

快速回復 返回頂部 返回列表