HF-vapor release process for ultrathin single crystal silicon cantilevers[EPFL]

mt7344

Combined Al-protection and HF-vapor release process for ultrathin single crystal silicon cantilevers
Abstract
A new technology based on a combination of Al-protection layers and HF-vapor etching to produce ultrathin single crystal silicon
* _1 b0 s0 h0 scantilevers is presented. 500 lm long, 10 lm wide and 0.5 lm thick cantilevers have been fabricated with a high yield. A resonance frequency
of 2 kHz, Q factor >100,000 and a force sensitivity of 6.0 · 1017 N/Hz1/2 have been obtained in vacuum at room temperature for
! q. H% t# S4 _( h8 J" b  ?cantilevers annealed at 800 C.

; A1 e; q4 Z$ V- h5 ?# q1 `
網路上抓的 paper, 希望對大家有幫助!!
5 L, f0 ?" [) b權限10 & RDB=0

8 x7 T% }3 z# F( O( G! H. d9 g

遊客，如果您要查看本帖隱藏內容請回復

[ 本帖最後由 mt7344 於 2007-6-7 09:57 PM 編輯 ]