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First Fully CMOS-Integrated 3D Hall Probe[EPFL/2005]

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發表於 2007-6-11 22:34:42 | 只看該作者 回帖獎勵 |倒序瀏覽 |閱讀模式
網路上抓的 paper, 希望對大家有幫助!!# Y6 P( R4 ]4 m6 t
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ABSTRACT5 X: O4 M6 e; K  }4 a
In this paper, we present a new planar fluxgate: j& A' H- [: _, r
magnetometer structure. The sensor has the2 a" U1 T" Y2 ~# n
orthogonal fluxgate configuration which makes the
" }( S& l5 H+ {2 e+ @detection part independent of the excitation
* x+ ?' D7 {7 z6 R6 w( _, O( Q, emechanism. The sensor consists of a ferromagnetic
- O2 ?4 p8 @* k8 n$ H5 wcylindrical core covering an excitation rod, and! G- D' J* N- C
planar coils for signal detection. The fabricated
9 p3 c6 P# }5 y4 i' i' }sensor has a linear range of ±250 μT, a sensitivity9 |6 [7 {3 P( a/ ~' q& N) I
of 4.3 mV/mT, and a perming below 400 nT for3 E' i6 {4 d( x
200 mA peak sinusoidal excitation current at7 |; ~7 n3 N" t
100 kHz. The effect of demagnetization on the% Q3 Y! }9 A# v
sensitivity, linear range, and perming for this3 T* W) k6 q/ A# Z
structure is demonstrated by varying the length of1 s: K+ p" J; h) V
the ferromagnetic core.
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ABSTRACT
9 Y# V) t2 |$ g7 G3 i6 [0 W; j8 j: @In this paper we report on a 32x32 optical imager
$ D0 A. E# o: c" p4 q& B7 U  B* zbased on single photon avalanche diodes integrated in% |0 ^% C7 {$ s8 i* G! {
CMOS technology. The maximum measured dynamic( c& F8 b9 h1 s+ w1 K. H  M3 M
range is 120dB and the minimum noise equivalent4 c3 g6 X  k. I, h: U+ h" e
intensity is 1.3x10-3lx. The minimum integration time
& d3 m, @1 O. ^) T  `2 Pper pixel is 4􀁐s. The output of each pixel is digital,
# r" o: Q! Q( P, i. r2 Z$ T3 |' Wthereby requiring no complex read-out circuitry, no
' b' p  r# o: oamplification, no sample & hold, and no ADC.
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+ b+ g/ a. O+ A6 w, q( `: R3 I* vABSTRACT
( c8 o' F2 K' e5 P+ VWe present the first fully CMOS-integrated 3D  C* O& S9 a" ]& B5 c
Hall probe. The microsystem is developed for precise
5 j1 q+ ^4 Y$ tmagnetic field measurements in the range from
8 I- w0 i% ^! A0 n) r$ c3 u( Xmiliteslas up to tens of tesla in the frequency range
7 `0 j/ i) A$ m2 @from DC to 30 kHz and a spatial resolution of about
7 V" r5 f, _" J% H& ?/ Z" _150 μm. Microsystem is realized in a conventional
+ t7 x$ I  q" E- ]! l4 L* CCMOS process without any additional processing step# k5 O1 P" N/ G
and can be manufactured at very low cost. With the' R% f9 X3 e, M. h/ B
electronics circuit applying the so-called spinningcurrent+ T: e8 `# W* G) s) `
technique to the Hall sensor block, we obtain3 b8 N$ Q5 i. ?7 K/ l
low noise (a resolution better than 100 μT) and low
+ W3 \" O  H$ T- \* G+ r  f% R2 a6 |# hcross talk between the channels (less than 0.2%
" H5 m: E, P$ R7 @6 C1 xbetween the channels up to 2 T). The single chip, G, v2 ^7 n6 l* R" e5 K
configuration insures a precision of the orthogonality; A+ M: x* H4 X: k- A, C9 s6 [+ X
between the measurement axes better than 0.5°. A
: }2 z3 Y* {( r6 g& ktemperature sensor based on band-gap cell is integrated
5 B6 ]1 [2 W6 Q, F# |- C: udirectly on the chip, which allows a good temperature
0 y5 Y  v& M" N. bdrift compensation of the system.
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( I! A/ s# K8 i$ m' `Magnetic sensors having submicrometer spatial resolution
) i  t9 _1 l6 B& [/ G$ Sare key elements in several fundamental studies as well
* l- K" G* B, w5 B0 gas industrial applications.1–4 Hall effect devices are emerging" p" K$ S' C6 P# v* c
as one of the most suitable solutions.4–9 The ordinary Hall3 M$ q4 ^- @9 c; t
effect is due to the Lorentz force acting on charge carriers in% _6 O4 N6 [# O' U7 Z  Y
metals, semi-metals, and semiconductors.5 Magnetic materials) i& j5 D' f- q6 n: o
show additional “Hall phenomena” which are, generally& L5 M. e' n- w$ X
speaking, generated by spin–orbit interactions: the so-called
) U! A# U" z; Rextraordinary10–16 and planar Hall effects.17–
3 \6 i: ~- X" M$ N1 _& f1 [0 x3 W5 H% ]8 }. c
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We developed a LODESR spectrometer based on a miniaturized Hall sensor and a
4 [0 s- a9 i" M/ S0 C5 v0 Jresonant cavity tuned at 14 GHz. We used InSb cross-shaped Hall devices (designed and) y. g3 |2 w! D  L1 |2 `7 u: l
fabricated in collaboration with Asahi Corporation) with active areas down to (7 μm)2. The# `: n3 O8 E, ^" M
Hall sensor is inserted in the cavity within a hole.& Z4 n. g( b. i3 s8 _: F) e
Coupling between the microwave power (guided wave) and the cavity is achieved by using
) [# `$ k2 R5 M4 u5 Z6 ]5 zan iris.We adjusted the iris diameter and the cavity dimension such that the resonant& d. V# ?# d* [4 i# Q% k
frequency is about 14 GHz. Our final design has a 4.36 mm diameter aperture. The Hall
0 `' s3 j% r8 m, hdevice does not significantly change the Q-factor and the resonance frequency of the cavity.
5 z8 `1 v4 r/ q$ {4 [2 D3 K4 sThe quality factor Q of the cavity is about 104.
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" C6 ]6 F3 o2 P& u. M6 ]5 RAbstract—In this paper, we present a low-power, two-axis fluxgate, }& B( D6 ]7 C9 E' O+ }( H6 ~
magnetometer. The planar sensor is integrated in a standard
+ `$ X1 v* z* R! I5 F4 C9 C2 QCMOS process, which provides metal layers for the coils and
9 N% U; f  }7 ^6 O% f5 T& b* gelectronics for the signal extraction and processing. The ferromagnetic( p; V- q( h  t8 o
core is placed diagonally above the four excitation coils/ T! B- C! J8 j  T( |
by a compatible photolithographic post process, performed on
9 V, S, g" t/ r$ Y& y8 Ga whole wafer. The sensor works using the single-core principle,
8 Y! h2 Y0 d# R) twith a modulation technique to lower the noise and the offset
! }! @; z7 f  w% ^- jat the output. In contrast to traditional fluxgate approaches, the
( z4 j2 m7 {+ j: o% wsensor features a high degree of integration and minimal power
" P/ X6 P' H' ]9 Wconsumption at 2.5 V of supply voltage that makes it suitable/ B; k/ U# D7 Z6 m+ R
for portable applications. A novel digital feedback principle is4 n( S) Z: k) j7 y; J0 u1 f
integrated to linearize the sensor characteristics and to extend the, H# g& G5 G3 x+ G" M
linear working range.
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0 L, d  S, w' T7 W; i" ]A microscopic four-point probe 4PP for resistivity measurements on thin films was designed and
8 C; k. F7 P0 l5 u* Tfabricated using the negative photoresist SU-8 as base material. The device consists of four
( G! k0 s/ j/ a4 ?microscopic cantilevers, each of them supporting a probe tip at the extremity. The high flexibility of/ [, s0 c+ V5 P- A1 D& S1 H
SU-8 ensures a stable electrical point contact between samples and probe tip with all four electrodes
5 T5 P+ {) ~" R  Q4 Beven on rough surfaces. With the presented surface micromachining process, 4PPs with a  N9 V, O$ z; _. i7 b3 D5 f( E
probe-to-probe spacing of 10–20 m were fabricated. Resistivity measurements on thin Au, Al, and" W* v4 o8 ~2 _9 t4 a; X
Pt films were performed successfully. The measured sheet resistances differ by less than 5% from' {; B3 e- b; b$ D
those obtained by a commercial macroscopic resistivity meter. Due to the low contact forces( w( R, C  @9 C
Fcont10−4 N, the 4PP is suitable to be applied also to fragile materials such as conducting
7 q7 l7 I' l- {2 S7 ^polymers. Here the authors demonstrate the possibility of performing resistivity measurements on2 K- \7 z) p$ Z# R- a+ D5 q4 l
100-nm-thick pentacene C22H14 films with a sheet resistance Rs106 /. © 2005 American
  [  a6 s( Y) M) ZInstitute of Physics.
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; W% W) c: h/ K$ }" r- xWe present here a novel concept to perform NMR spectroscopy: Confining the sample within/ N3 M# _5 X. S; ^% {8 ^4 u
artificial vesicles, which are structured on the surface of a microfabricated planar detection3 p( y5 N. F. P- X0 M
coil. Different vesicle patterns show the improvement of the NMR performance, when; H5 w; K3 K6 K5 l0 `
structuring the sample in areas of homogenous RF field.
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% w' A# v2 z8 i- X) G2 nWe developed an inductive system to measure the surface concentration of superparamagnetic
0 ]* I2 ~9 T* p! zmicrobeads resulting from a bioassay. Our tabletop apparatus, tested with Dynal MyOne™; `% H& F( }: h6 S+ ]3 B& }6 a! V
microbeads, has a detection limit of about 1000 beads/Hz1/2 i.e., about 21010 Bohr magnetons.; C; o6 u5 c. X  h
The system can measure surface concentrations from 0.01% to 100% over the 6 mm2 sensitive area$ t! ?# k4 V6 d. B* S6 ~! W4 M5 U; P
with an integration time of 1 s. © 2005 American Institute of Physics./ R( S  j$ P$ I1 D- e$ r( W) k$ Q
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[ 本帖最後由 mt7344 於 2007-6-11 10:47 PM 編輯 ]

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發表於 2008-4-5 22:07:06 | 只看該作者
推推,我想看paper^^感謝大大唷~~
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發表於 2015-6-6 07:32:26 | 只看該作者
探討『磁力』相關的論文嗎?值得一看,甘溫啦。
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