supply clamp and I/O clamp ESD

ritafung

請問你們使用哪一種類型的I/O cell設計?

1) Local cell (PDIO + NDIO) + RC trigger clamp
# Q) E% a8 N' q0 y; n9 d2) Local cell (GDPMOS + GGNMOS) + RC trigger clamp
  Z! l: z  [! N, `  Q3) Purely GGNMOS
" d  {- C/ W; {  m  x. q1 Q& ~
For RC trigger clamp, how much RC do you design? My company needs 4KV HBM.

ritafung

我現在做的是0.13um,要4kV,而且是multi-power domain,有點困難...
Layout 的要求非常高! 但是永遠實際上是做不到~~~trade-off~~