CMOS magnetic sensors with integrated ferromagnetic parts[EPFL]

mt7344

Abstract
" V! W7 R% L4 _6 |; RThe paper deals with Hall and flux-gate magnetic field sensors consisting of integrated combination of CMOS ASICs and planar ferromagnetic
components. Ferromagnetic parts are made of a soft amorphous alloy, integrated at the CMOS wafer in a post-processing production phase.
* l5 y6 |+ X+ C% U9 v7 aWhen the sensors are exposed to an in-plane magnetic field, under the peripheries of ferromagnetic parts appears a strong magnetic induction
perpendicular to the wafer surface. This perpendicular field is sensed either by Hall plates or planar coils. In the case of Hall magnetic sensors,
# v! g$ L- D- \3 f: ssuch ferromagnetic parts give a magnetic gain of 2–10. Compared to conventional integrated Hall magnetic sensors, the new sensors have up to
10 times higher magnetic resolution and they respond to a magnetic field parallel with the surface of the chip. They are used as current sensors or
/ u% `1 ?; X1 |$ P  h/ Qangular position sensors. In the case of flux-gate sensors, both the saturation-forcing coil and the pick-up coils are realized as planar coils, using
metallization layers that exist in the CMOS process. The integrated flux-gate technology is illustrated by a low-power two-axis magnetic field
' ]7 Y. O6 w  w) s# Ksensor suitable for a portable electronic compass.

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$ T0 E8 |9 C) x- i9 j權限10 & RDB=3
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