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Abstract
P1 y, q* g; e- L* {0 e& _The paper deals with Hall and flux-gate magnetic field sensors consisting of integrated combination of CMOS ASICs and planar ferromagnetic
- H3 K$ s+ @+ f0 U5 r) S* Z; d! O8 ucomponents. Ferromagnetic parts are made of a soft amorphous alloy, integrated at the CMOS wafer in a post-processing production phase.
; a3 m V) ]( q; E5 I T6 JWhen the sensors are exposed to an in-plane magnetic field, under the peripheries of ferromagnetic parts appears a strong magnetic induction4 N2 H0 N \1 j W2 i( {2 i2 e
perpendicular to the wafer surface. This perpendicular field is sensed either by Hall plates or planar coils. In the case of Hall magnetic sensors,
! o$ F+ z5 Q9 P2 G# |# wsuch ferromagnetic parts give a magnetic gain of 2–10. Compared to conventional integrated Hall magnetic sensors, the new sensors have up to# |$ D. e5 Y. V2 U! p
10 times higher magnetic resolution and they respond to a magnetic field parallel with the surface of the chip. They are used as current sensors or; m% g$ ^) S* F
angular position sensors. In the case of flux-gate sensors, both the saturation-forcing coil and the pick-up coils are realized as planar coils, using* m& x" W7 P1 {6 \8 |
metallization layers that exist in the CMOS process. The integrated flux-gate technology is illustrated by a low-power two-axis magnetic field
{$ W8 @ b f: `+ Nsensor suitable for a portable electronic compass.+ M! U4 c- i6 L; e6 S, J i
u, N6 I) L4 y: g4 ?1 Y! T( ^
* G* x0 P! V' K( n# a' J網路上抓的 paper, 希望對大家有幫助!!0 I! j' @$ p7 j! |. d
權限10 & RDB=3
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