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For ESD test (HBM)1 X# x" P9 A: x* g6 w! a& _
The following are the test combination:$ O1 [% Z5 ]: I$ K# |: z
1. Power to Power9 p2 W/ ^6 J Y' x8 ^- q# _% x7 @
2. Power to Ground3 g2 r8 i' S, \5 [2 c# c
3. IO to Power
; z: P5 m/ k' N1 F) L4. Io to Ground2 [& n/ x7 o0 E6 f, O
5. IO to IO [5 S$ c `3 B2 U* M+ ~" ?& [; b
(different power domain need to be treated as different power. For ground usually you can treat as one group_silicon use substrate as common ground. But if you measure two different ground pin/ball > 2ohms. It should be seperated as 2 grond.)
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the total zap time fomula will be~ 2(+/- polarity) X (IO#X(P#+G#)+IO#+P#X(P#-1)X(P#-2)X...X1+P#XG)
% l F* b! `8 F6 P3 T( oFor example: You have IO1/IO2/IO3/P1/P2/G1; I Y* u& A4 Y! X' u
2x((3X(2+1)+3+2X1+2X1)=25(multiple the zap interval)
% j7 w. l. _# W+ ~/ `So for high pin count it will take a lot of time. But it won't take more than a week(for one chip).
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# F2 b; |1 e; ?, C I: y% wFor your reference. |
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