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Abstract7 j) g. B% u \3 N& N
The paper deals with Hall and flux-gate magnetic field sensors consisting of integrated combination of CMOS ASICs and planar ferromagnetic3 f! Q! o" C! }" X8 _% ^
components. Ferromagnetic parts are made of a soft amorphous alloy, integrated at the CMOS wafer in a post-processing production phase.
" }$ t1 p$ O/ {5 m1 [1 E& S+ PWhen the sensors are exposed to an in-plane magnetic field, under the peripheries of ferromagnetic parts appears a strong magnetic induction8 H$ [; X8 B/ _! ]0 ?9 X- W
perpendicular to the wafer surface. This perpendicular field is sensed either by Hall plates or planar coils. In the case of Hall magnetic sensors,' }% U0 d' D B, q5 d' r
such ferromagnetic parts give a magnetic gain of 2–10. Compared to conventional integrated Hall magnetic sensors, the new sensors have up to+ P1 d+ o& t+ C1 a$ k
10 times higher magnetic resolution and they respond to a magnetic field parallel with the surface of the chip. They are used as current sensors or, y* }, H, V+ \- ~2 m& x3 U/ P' w
angular position sensors. In the case of flux-gate sensors, both the saturation-forcing coil and the pick-up coils are realized as planar coils, using
1 E5 N% [2 z6 s, V/ m) ymetallization layers that exist in the CMOS process. The integrated flux-gate technology is illustrated by a low-power two-axis magnetic field' P3 l! e( R0 a# }9 H+ o/ [$ X
sensor suitable for a portable electronic compass. }7 C R- ?& Z& Z0 H" \4 r3 s
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. s' U5 ?5 l$ F, N0 {5 L網路上抓的 paper, 希望對大家有幫助!!
- P. F9 x2 j2 c# q2 y權限10 & RDB=3
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