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Abstract
# {+ T# i+ V0 oThe paper deals with Hall and flux-gate magnetic field sensors consisting of integrated combination of CMOS ASICs and planar ferromagnetic# A, I, Z9 u4 G8 }
components. Ferromagnetic parts are made of a soft amorphous alloy, integrated at the CMOS wafer in a post-processing production phase.
; a' ]& e4 k7 P; j0 K4 q# DWhen the sensors are exposed to an in-plane magnetic field, under the peripheries of ferromagnetic parts appears a strong magnetic induction3 m# _1 M. O5 L, h& j* `4 r$ L( g
perpendicular to the wafer surface. This perpendicular field is sensed either by Hall plates or planar coils. In the case of Hall magnetic sensors,. j2 W" S# w8 U) K
such ferromagnetic parts give a magnetic gain of 2–10. Compared to conventional integrated Hall magnetic sensors, the new sensors have up to" g! X0 k& L5 ~- k" i
10 times higher magnetic resolution and they respond to a magnetic field parallel with the surface of the chip. They are used as current sensors or4 r1 n3 y O5 J) c. H
angular position sensors. In the case of flux-gate sensors, both the saturation-forcing coil and the pick-up coils are realized as planar coils, using
$ j/ i# Y9 z) S$ \metallization layers that exist in the CMOS process. The integrated flux-gate technology is illustrated by a low-power two-axis magnetic field
3 o4 l' e/ g0 p: s- Q9 K7 g$ E" m7 Isensor suitable for a portable electronic compass., z$ r4 `- t# X' D, C6 U3 W! h
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& s/ ~# ?- u$ Y網路上抓的 paper, 希望對大家有幫助!!7 d1 h' _2 K1 s
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