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用transmission gate 模擬電阻約40k
8 v" P3 N" h, g+ M( S# }# p(附上HSPICE). i& `7 {; ^' G
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Mrn vi vdd vo gnd nch5 l=3u w=1u
* O$ J+ _4 J+ L) {- H2 PMrp vi gnd vo vdd pch5 l=3u w=1u
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! Q5 g! T; e4 t! X5 ~+ { vi vi gnd dc 3.7v2 j8 ~% b, p+ Z4 F9 Y D
vdd vdd gnd dc 5v
7 q; o$ u8 n( u' Z.op
& ^! t# R& u7 a4 V5 w; k' [0 @' K.option post
m. q! {1 Y/ S2 q2 q3 u.dc vi 0 5 0.01% }4 A, S# I& R& {5 i* ~( O
.print |(Mrp)|(Mrn)rp=par('1/lx8(Mrp)')rn=par('1/lx8(Mrn)')! M8 C1 G" g$ t; W3 _% Z2 B& d
+req=par('1/(lx8(Mrp)+lx8(Mrn))')& t4 o3 ~" W9 g) C7 m
.end: R3 H3 f6 k) t5 A- L7 F
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4 F6 Q$ \' T& H' g7 X$ w. O問題是VI灌3.7時,發現MRN會進入截止區/ ? o. R. k% F* ?/ Q
但....模擬圖還是顯示R=40K,請問這種T.R電阻還可以用嗎?還是兩個MOS都要在SAT區? |
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