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Abstract$ H1 q1 j5 z& ~
The paper deals with Hall and flux-gate magnetic field sensors consisting of integrated combination of CMOS ASICs and planar ferromagnetic
- r+ U0 Y* i( T2 y! ^components. Ferromagnetic parts are made of a soft amorphous alloy, integrated at the CMOS wafer in a post-processing production phase.& I- c9 z% v; S
When the sensors are exposed to an in-plane magnetic field, under the peripheries of ferromagnetic parts appears a strong magnetic induction
w0 e9 i: A* L' A2 Y% M/ g( \perpendicular to the wafer surface. This perpendicular field is sensed either by Hall plates or planar coils. In the case of Hall magnetic sensors,( c, r) D9 S9 u( a
such ferromagnetic parts give a magnetic gain of 2–10. Compared to conventional integrated Hall magnetic sensors, the new sensors have up to" _$ R3 L6 B! Q: y5 M# E
10 times higher magnetic resolution and they respond to a magnetic field parallel with the surface of the chip. They are used as current sensors or( m( d1 O9 q8 B; |5 }& b
angular position sensors. In the case of flux-gate sensors, both the saturation-forcing coil and the pick-up coils are realized as planar coils, using
" K( m+ u, y# \/ K, c2 tmetallization layers that exist in the CMOS process. The integrated flux-gate technology is illustrated by a low-power two-axis magnetic field
; s6 Q8 i8 L' R& esensor suitable for a portable electronic compass.
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網路上抓的 paper, 希望對大家有幫助!! E2 `, c; P3 \2 n9 r5 ^! Z
權限10 & RDB=3
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